Overview
HXN10111 is a high-performance 33.0~37.0GHz high-power amplifier. It is using a 0.15um gate-length GaN high electron mobility transistor (HEMT) process. The chip is grounded via a through-hole via metal on the back. All chip products are 100% RF measured.
It operates from dual power supplies with a drain voltage of Vds=22V and can provide 38.5dBm of output power in 33.0~37.0GHz.
