Overview
HXN10117 is a high-performance 43~46 GHz high-power amplifier. It's using a 0.15um gate-length GaN high electron mobility transistor (HEMT) process. The chip is grounded via a through-hole via metal on the back. It operates from dual power supplies with a drain voltage of Vds=20V and can provide 39dBm of output power in 43~46 GHz.
