Overview
HXN10128 is a high-performance 92~96GHz power amplifier. It's using a 0.1um gate-length GaN high electron mobility transistor (HEMT) process. The chip is grounded via a through-hole via metal on the back. It operates from dual power supplies with a drain voltage of Vds=15V and can provide 30dBm of output power in 92~96GHz.
