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HX430006C1

Product Data Sheet

Overview

HX430006C1 is a high-power amplifier chip made with GaN HEMT process. The operating frequency range covers 0.3GHz ~ 6GHz, the power gain is greater than 10dB, the typical saturated output power is 10W, the power added efficiency is greater than 35%, and it can work in pulse and cw mode. The chip is grounded through the back through-hole, dual power supply operation, typical operating voltage Vd = +28V, Vg = -2.6V.

Parameters

* Frequency: 0.3~6GHz

* Typical Power Gain: 10dB

* Typical Output Power: 40dBm
* Typical Added Efficiency: 35%
* Process Type: GaN HEMT technology
* Conditions of Use: CW/Pulse
* Dimensions: 3.30mm×2.40mm×0.10mm

Application

* Transceiver Assembly

* High Power Solid State Transmitter