GaN Power Amplifiers (Packaged)

Products

PRODUCTS

HX0911P20WM

Product Data Sheet

Overview

HX0911P20WM is a carrier-mounted L-band power amplifier module using a cascade of 2-stage GaN HEMT die chips. The operating frequency range covers 0.99GHz~1.12GHz, with a typical saturated output power of 43dBm@28V and a typical power gain of 28dB, which is suitable for pulse operation mode.

Parameters

* Frequency: 0.99GHz~1.12GHz 
* Power Gain: ≥28dB (Class C)
* Saturated Output Power: 43 dBm@28V 
* Power Added Efficiency: 50% 
* Voltage: ≤50V 
* Mode: Pulse

Application

* Radar

* Microwave Transceiver Components