GaN Power Amplifiers (Packaged)

Products

PRODUCTS

HX1214P70WM

Product Data Sheet

Overview

HX1214P70WM is a carrier-type L-band power amplifier module using a cascade of 2-stage GaN HEMT die chips. The operating frequency range covers 1.20GHz~1.40GHz, the typical saturated output power is greater than 70W, and the typical power gain is 28dB, which is suitable for pulse and continuous wave operation modes.

Parameters

* Frequency: 1.20GHz~1.40GHz
* Power Gain: 28dB
* Saturated Output Power: ≥70W
* Power Added Efficiency: 65% (typ)
* Voltage: +48V
* Mode: pulse modulation


Application

* Radar

* Microwave Transceiver Components