GaN Power Amplifiers (Packaged)

Products

PRODUCTS

HX2735P400WM

Product Data Sheet

Overview

GaN HEMT die chip is used. The operating frequency range covers 2.7GHz~3.5GHz, with a typical saturated output power of 56dBm and a typical power gain of 36dB, which is suitable for pulse operation mode. It can be used in microwave systems such as microwave transceiver components.

Parameters

* Frequency: 2.7GHz~3.5GHz 
* Saturated Output Power: 56dBm 
* Power Gain: 36dB 
* Power Added Efficiency: 50%

Application

* Microwave Transceiver Components
* Microwave System