GaN Power Amplifiers (Packaged)

Products

PRODUCTS

HXN20008-A

Product Data Sheet

Overview

HXN20008-A power amplifier module is a high-performance power amplifier module. It operates from a positive and negative power supply with a drain voltage of Vds=28V and a gate voltage of Vgs=-1.8V, providing an output power of 39.5dBm over 2-20GHz, with a power gain of 7.5dB and a power added efficiency of 15%.
It is available in 18.03mm×8.7mm×2.5 mm cermet shell packages with reflow soldering on the pin pad surfaces for XX mounting processes.

Parameters

* Frequency: 2~20GHz
* Typical Small Signal Gain: 8dB
* Typical o=Output Power: 39.5dBm
* Typical Added Efficiency: 15%
* Process Type: 0.20um HEMT Technology
* Bias: 28V, -1.8V(Typ.)

Application

* Electronic Countermeasures