GaN Power Amplifiers (Packaged)

Products

PRODUCTS

HXN20041-AHR

Product Data Sheet

Overview

HXN20041-AHR is a high-performance 7-12GHz high-power amplifier fabricated using a 0.25um gate-length GaN high electron mobility transistor (HEMT) process. It operates from a dual power supply with a drain voltage of Vds=28V and it can deliver 47dBm of output power over 7-12GHz.

Parameters

* Frequency: 7-12GHz
* Typical Small Signal Gain: 32dB
* Typical Output Power: 47dBm
* Typical Added Efficiency: 42%@7-10GHz,
                                        37%@10-12GHz
* Supply Voltage: 28V, -2.2V

Application

* Microwave Transceiver Components

* Wireless Communication