Overview
HXN20050-F1 is a high-power, high-linearity GaN power MMIC chip, manufactured using a 0.25μm GaN power monolithic process, with a frequency range of 14.2GHz–16.8GHz, a typical saturated output power of 47.5dBm, a power-added efficiency of 35%, a power gain of 19.5dB, and can operate in pulse and continuous wave modes.
