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HXNM42004

Product Data Sheet

Overview

The HXNM42004 is a GaN HEMT high-power amplifier, fabricated using a GaN power MMIC process.
It operates in the 8GHz to 12GHz frequency range, features a power gain of 20dB, a typical saturated output power of 51dBm, and a typical power-added efficiency of 40%. It can operate in pulsed mode. It operates with dual power supplies, typically with a Vd of +48V and a Vg of -2.0V. 

Parameters

* Frequency Range: 8GHz~12GHz 
* Power Gain: 20dB 
* Saturated Output Power: 51dBm 
* Power Added Efficiency: 40% 

Application

* Microwave Transceiver Components 

* Solid-state Transmitters