Overview
The HXN20039-C GaN power amplifier is a high-power, high-efficiency power amplifier. Fabricated using a GaN HEMT process, this amplifier is monolithically packaged. Operating from a dual-supply system with a drain voltage of 20V (Vds), it delivers 41dBm output power in the 17-20 GHz frequency range, 29dB small-signal gain, 20dB power gain, and 35% power-added efficiency.
