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HX432010AF3

Product Data Sheet

Overview

HX432010AF3 is a wideband absorptive GaAs pHEMT SPDT switch chip covering the frequency band DC~20GHz, and it provides greater than 40dB isolation and 1.8dB insertion loss across the entire operating frequency band. 0/-5V logic control, no external power bias, no power consumption. It has excellent switching characteristics and port standing wave characteristics in the operating frequency band, and is suitable for microwave hybrid integrated circuits, multi-chip modules and low-power systems
It uses an on-chip through-hole metallization process to ensure good grounding. The back side of the chip is metallized and is suitable for eutectic sintering or conductive adhesive bonding processes.

Parameters

* Frequency: DC~20GHz
* Isolation: >40dB@20GHz
* Insertion Loss: 1.8dB@20GHz
* Absorption

Application

* Wireless Communication Equipment
* Radar and Electronic Countermeasures
* Military and Aerospace
* Instruments and Meters
* Microwave Radio
* Test & Measurement