Transceiver Amplitude-phase Multifunctional Chips

Products

PRODUCTS

HX0011S-MF

Product Data Sheet

Overview

It is an X-band multifunction GaAs chip (MMIC) that integrates amplifiers, switches, six-position attenuators, six-position phase shifters, control drivers, and more, and is fabricated using a gallium arsenide pseudo-high electron mobility transistor (PHEMT) process. The chip is grounded via a through-hole via metal on the back. All chip products are 100% RF measured. The chip operates from a +5V/-5V power supply, the control level signal is TTL, and the phase shift attenuation is controlled in parallel.

Parameters

* Frequency: 7-13GHz 
* Gain to Receiver: 13dB
* Transmit Small Signal Gain: 26dB
* Receiver Output P-1: 12dBm
* Transmit Output Saturated Power: 24dBm
* Received Noise Figure: 8dB
* Number of Phase Shifts: 6 bits
* Phase Shift Step: 5.625°
* Phase-Shifted RMS: 2.5°, phase-shifted additional attenuation ±1dB
* Attenuation Bits: 6 digits
* Attenuation Step: 0.5dB
* Attenuation RMS: 0.3dB, attenuation additional phase shift ±4°
* Receiver Input and Output VSWR: 1.4
* Transmit Input and Output VSWR: 1.5
* Operating Voltage: +5V/+5V/-5V
* Quiescent Current: 80mA (transmit) / 77mA (common) / 13mA (-5V)
* Control Mode: TTL parallel code control
* Dimension: 4.5mm*3.5mm*0.1mm

Application

* TR Transceiver Modules

* RF Microwave Systems etc.