Transceiver Amplitude-phase Multifunctional Chips

Products

PRODUCTS

HX0001S-MF

Product Data Sheet

Overview

It is an X-band multifunction GaAs chip (MMIC) that integrates amplifiers, switches, six-bit attenuators, six-position phase shifters, control drivers, and more, fabricated using a gallium arsenide pseudo-high electron mobility transistor (PHEMT) process. The chip is grounded via a through-hole via metal on the back. All chip products are 100% RF measured. The chip operates from a +4.3V/-2.9V power supply, the control level signal is TTL, and the phase shift attenuation is controlled in parallel.

Parameters

* Frequency: 8-12GHz 
* Gain to Receiver: 13dB
* Transmit Gain: 6dB
* Receive, Transmit P-1: 12/13dBm
* Number of Phase Shifts: 6 bits
* Phase Shift Step: 5.625°
* Phase Shift RMS: 2°, amplitude fluctuation ± 1.2 dB
* Attenuation Bits: 6 digits
* Attenuation Step: 0.5dB
* Attenuation RMS: 0.4dB with additional phase shift ±9°
* Input and Output VSWR: 1.4
* Operating Voltage: +4.3V/-2.9V
* Control Mode: TTL, parallel control
* Dimension: 3.8mm*4.5mm*0.1mm

Application

* TR Transceiver Modules

* RF Microwave Systems etc.