Transceiver Amplitude-phase Multifunctional Chips

Products

PRODUCTS

HX0010S-MF

Product Data Sheet

Overview

It is a Ku-band multifunction GaAs chip (MMIC) that integrates amplifiers, switches, six-position attenuators, six-position phase shifters, control drivers, and more, and is fabricated using a gallium arsenide pseudo-high electron mobility transistor (PHEMT) process. The chip is grounded via a through-hole via metal on the back. All chip products are 100% RF measured. The chip operates from a +5V/-5V power supply, the control level signal is TTL, and the phase-shift attenuation is serial controlled. Absolute maximum allowed

Parameters

* Frequency: 14-18GHz 
* Gain to Gain: 5dB
* Transmit Power Gain: 32dB
* Receive P-1: 5dBm
* Transmit Channel Saturated Output Power Psat: 33dBm
* Number of Phase Shifts: 6 bits
* Phase Shift Step: 5.625°
* Phase Shift RMS: 3.5°, phase shift additional attenuation ± 2dB
* Attenuation Bits: 6 bits (receive only)
* Attenuation Step: 0.5dB (receive only)
* Attenuation RMS: 0.7dB, Attenuation Additional Phase Shift± 10° (Receive Only)
* I/O VSWR: 1.6
* Operating Voltage VDD/VDN: 5V
* Operating Voltage VSN: -5V
* Control Mode: TTL
* Dimension: 4.05mm*3.2mm*0.1mm

Application

* TR Transceiver Modules

* RF Microwave Systems etc.