Unmatched GaN Power Transistors (28V)

Products

PRODUCTS

Overview

HX03140F2/HX03140P2 is a140W GaN RF power amplifier transistor with high efficiency and high gain for applications frequency up to 3GHz. It is available in flanged package and operates from 28V supply mode.

Parameters

* Max Saturated Power: 180W
* Best Drain Efficiency: 81%

Application

* RF/Microwave Systems