Unmatched GaN Power Transistors (28V)

Products

PRODUCTS

HX04100F2

Product Data Sheet

Overview

HX04100F2 is a GaN RF power amplifier transistor with high efficiency and high gain for applications frequency up to 4GHz. It is available in flanged packages and operates in pulsed or continuous waves mode with 28V supply mode.

Parameters

* Max Saturated Power: 126W
* Best Drain Efficiency: 80.6%

Application

* RF/Microwave Systems