Unmatched GaN Power Transistors (28V)

Products

PRODUCTS

Overview

HX0610F2/HX0610P2 is a GaN RF power amplifier transistor with high efficiency and high gain for applications frequency up to 6GHz. It is available in both flanged and unflanged packages and operates in pulsed or continuous wave mode with 28V supply.

Parameters

* Saturated Power: 16.60W
* Saturated Drain Efficiency: 80.2%

Application

* RF/Microwave Systems