Unmatched GaN Power Transistors (28V)

Products

PRODUCTS

Overview

HX0625F2/HX0625P2 is a GaN RF power amplifier transistor with high efficiency and high gain for applications frequency up to 6GHz. It is available in both flanged and unflanged packages and operates in pulsed or continuous wave mode with 28V supply.

Parameters

* Max Saturated Power: 34W
* Best Drain Efficiency: 80.2%

Application

* RF/Microwave Systems