Products

PRODUCTS

Overview

The HXN50165 is a 250-watt internally matched GaN HEMT, designed for pulsed amplifier applications with frequencies from 2700 to 3500MHz. When used in narrower band like 2700-2900MHz etc, it can be a 300W transistor. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.  

Parameters

Application

* Wireless Communication Infrastructure

* Wideband Amplifier

* EMC Testing

* ISM