The HXNM44005-F1 is a power amplifier chip fabricated using a 0.25μm GaN HEMT process. It operates over a frequency range of 6GHz to 12GHz, with a power gain greater than 22dB, a typical saturated output power of 46dBm, and a typical power-added efficiency of 35%. It can operate in Pulse/CW modes. The chip's typical operating voltages are Vd=+28V and Vg=-2.8V.
