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HXNM45005F8

Product Data Sheet

Overview

The HXNM45005F8 is a high-performance 2.7~3.6 GHz GaN power amplifier manufactured using HEMT technology.
The device operates from dual power supplies with a 28 V drain supply voltage (VDS =28V) and delivers an output power of 47dBm  across the 2.7~3.6 GHz frequency range.


Parameters

* Frequency Range: 2.7-3.6GHz

* Small Signal Gain (Typ.): PL: 33dB/CW: 30dB
* Power Gain (Typ.): PL: 27dB/CW: 23.8dB
* Output Power (Typ.): PL: 47dBm/CW: 46.8dBm
* PAE (Typ.): PL: 58%/CW: 57%
* Supply Voltage: 28V, -2.3V(Typ.), Idq=370mA (Pulse) 

                            28V,-2.3V(Typ.), Idq=2.7mA (CW)
* Package Dimensions: 7.8mm*7.8mm*1.65mm



Application

*Microwave Transceiver Modules
*Wireless Communications