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GaN HEMT die chip is used. The operating frequency range covers 5.3GHz~5.9GHz, with a typical saturated output power of 51dBm and a typical power gain of 41dB, which is suitable for pulse operation mode.
Parameters
* Frequency: 5.3GHz~5.9GHz * Saturated Output Power: 51dBm * Power Gain: 41dB * Power Added Efficiency: 50%
Application
* Microwave Transceiver Components * Microwave System
