Overview
HXN20043-F1 is a 7-12GHz high-power amplifier with excellent performance, which is manufactured using a GaN high electron mobility transistor (HEMT) process with a gate length of 0.25um. The HXN20043-F1 chip works with dual power supplies, the drain voltage Vds=28V, and can provide 46dBm output power within 7-12GHz.
