The HXN10017F8 is a high-performance 2–18 GHz driver amplifier chip manufactured using a 0.20µm gate length GaN HEMT process. The HXN10017F8 operates with dual power supplies, providing 34dBm of output power across the 2–18 GHz range with a drain voltage of Vds=28V. This chip is primarily used in transceiver components and wireless communications, etc.
Parameters
* Frequency Range：2～18GHz
* Small Signal Gain：11dB * Output Power：34dBm@28V * PAE: 20% * Quiescent Current：0.6A * Bias：24 V, -1.8V（Typ.） * Package Size：7.8mm×7.8mm×1.65mm
