Hisiwell Microwave Corp. has recently released four new packaged GaN power amplifier chips.
Here is a quick summary of these newly developed PAs.
Product Specifications Summary
Technical Analysis & Product Highlights
The new Parts are engineered to address a broad spectrum of frequency requirements, ranging from wideband microwave operations to high-frequency Ka-band communication.
*Broadband Versatility (2-18 GHz): The HXNM42022-F is optimized for wideband applications, offering 10W of output power and a robust 22dB gain, making it an ideal choice for universal testing equipment and multi-purpose broadband systems.
*Performance Replacement (6-18 GHz): The HXNM42007-F1 is a high-performance solution delivering 20W of power with 18dB gain. Designed specifically as a direct pin-to-pin replacement for the TGA2963-CP, it provides customers with a reliable, high-efficiency alternative without requiring board redesigns.
*Ka-Band High-Power (31-37 GHz): For high-frequency infrastructure, the HXNM42050F7 excels in the 31-37 GHz range, providing 10W of power and 20dB gain to ensure stable signal integrity in extreme environments.
*Precision Ka-Band (32-40 GHz): The HXNM42047F7 is tailored for higher-frequency Ka-band requirements, balancing a 2W power output with an 18dB gain, perfect for dense, high-frequency integration.
To learn more about the detailed specifications of these GaN amplifier chips, please visit our Packaged GaN PA Page: https://www.hisiwell.com/GaNPowerAmplifiersPackaged.html
