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HXN50160F

Product Data Sheet

Overview

The HXN50160F is a 800-watt internally matched GaN HEMT, designed for pulsed amplifier applications with frequencies from 1.2-1.6GHz. There is no guarantee of performance when this part is used in applications designed outside of these frequencies. 

Parameters

Application

* Wireless Communication Infrastructure

* Wideband Amplifier

* EMC Testing

* ISM