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HXN42013 is a GaN internally matched power transistor used in standard communication bands to provide optimal power and gain performance in 50 ohm systems.
Parameters
* Frequency: 3.1GHz~3.5GHz * Output Power: 57.5dBm (Typ.) * Power Gain: 13.5dB (Typ.) * Power Added Efficiency: 55% (Typ.) * Metal Package
