Overview
The HXNM45003 chip is a high-performance 0.5–7.5 GHz high-power amplifier manufactured using GaN HEMT technology. The chip is grounded via a through-hole on the back metal. All chips undergo 100% RF testing. This chip operates with dual power supplies, has a drain voltage Vds = 36V, and provides 44 dBm of output power within the 0.5–7.5 GHz range.
