Overview
The HXNM44009 is a power amplifier chip fabricated using a 0.25 μm GaN HEMT process. It operates in the frequency range of 8.0 GHz to 12.0 GHz, with a power gain greater than 23 dB, a typical saturated output power of 48.5 dBm, and a typical power-added efficiency of 44%. It can operate in pulse/continuous wave modes. The chip is grounded via a rear via, with typical operating voltages Vd = +28 V and Vg = -2.8 V.
