Overview
The HXNM44006 is a power amplifier chip fabricated using a 0.25μm GaN HEMT process. It operates over a frequency range of 6GHz to 18GHz, with a power gain greater than 20dB, a typical saturated output power of 45dBm, and a typical power-added efficiency of 23%. It can operate in pulse/continuous wave modes. The chip is grounded via a rear via, and its typical operating voltages are Vd = +28V and Vg = -2.2V.
