Overview
The HXNM44005 is a power amplifier chip fabricated using a 0.25μm GaN HEMT process. It operates in the 6GHz to 12GHz frequency range, has a power gain greater than 23dB, a typical saturated output power of 46dBm, and a typical power-added efficiency of 35%. It can operate in pulse/continuous wave modes. The chip is grounded via a rear via, and its typical operating voltages are Vd = +28V and Vg = -2.8V.
