Overview
The HXNM44002 is a power amplifier chip fabricated using a 0.25μm GaN HEMT process. It operates in the frequency range of 4.0GHz to 8.0GHz, with a power gain greater than 17dB, a typical saturated output power of 47dBm, and a typical power-added efficiency of 40%. It can operate in pulse mode. The chip is grounded via a rear via, and its typical operating voltages are Vd = +28V and Vg = -2.6V.
