Overview
The HXNM44020-A is a power amplifier chip fabricated using GaN HEMT technology and packaged in a metal-ceramic package. It operates over a frequency range of DC to 6GHz, with a power gain greater than 10dB, a typical saturated output power of 40dBm, and a typical power-added efficiency of 35%. It can operate in pulse/continuous wave modes. The chip is grounded via a rear via, and its typical operating voltages are Vd = +28V and Vg = -2.4V.
