The HXNM42047F7 is a high-power amplifier chip based on GaN HEMT transistors, manufactured using 0.13μm GaN power MMIC technology. The operating frequency range covers 32GHz to 40GHz, with a power gain greater than 18.4dB, a typical saturated output power of 2.2W, and a typical power-added efficiency of 38%. It can operate in both pulsed and continuous-wave (with derated operating voltage) modes. The chip is grounded through backside vias, operates with dual power supplies, and has a typical operating voltage of Vd = 12V, Vg = -1.5V. This chip is mainly used in microwave transceiver modules, high-power solid-state transmitters, and other applications.
