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HX1020120P2-Hisiwell
Home Unmatched GaN Power Transistors (28V)

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HX1020120P2

Product Data Sheet

Overview

HX1020120P2 is a 120W GaN RF power amplifier transistor with high efficiency and high gain for applications frequency in the 1-2GHz. It operates from 28V supply mode.

Parameters

* Maxi Saturated Power: 155W
* Best Drian Efficiency: 81.1%

Application

* RF/Microwave Systems